Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
Gateoxidfehler — užtūros oksido defektas statusas T sritis radioelektronika atitikmenys: angl. gate oxide defect vok. Gateoxidfehler, m rus. дефект подзатворного оксида, m pranc. défaut d oxyde de grille, m … Radioelektronikos terminų žodynas
défaut d'oxyde de grille — užtūros oksido defektas statusas T sritis radioelektronika atitikmenys: angl. gate oxide defect vok. Gateoxidfehler, m rus. дефект подзатворного оксида, m pranc. défaut d oxyde de grille, m … Radioelektronikos terminų žodynas
užtūros oksido defektas — statusas T sritis radioelektronika atitikmenys: angl. gate oxide defect vok. Gateoxidfehler, m rus. дефект подзатворного оксида, m pranc. défaut d oxyde de grille, m … Radioelektronikos terminų žodynas
дефект подзатворного оксида — užtūros oksido defektas statusas T sritis radioelektronika atitikmenys: angl. gate oxide defect vok. Gateoxidfehler, m rus. дефект подзатворного оксида, m pranc. défaut d oxyde de grille, m … Radioelektronikos terminų žodynas
High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
Optical beam induced current — (OBIC) is a semiconductor analysis technique performed using laser signal injection. The technique uses a scanning laser beam to create electron–hole pairs in a semiconductor sample. This induces a current which may be analyzed to determine the… … Wikipedia
Carrier scattering — Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that… … Wikipedia
Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… … Wikipedia
